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Volumn 81, Issue 23, 2010, Pages

Engineering the figure of merit and thermopower in single-molecule devices connected to semiconducting electrodes

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Indexed keywords


EID: 77956337859     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.235406     Document Type: Article
Times cited : (105)

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    • Though doping effects are not included in our approach, a possibility to tune the position of the Fermi level and to pin it at the valence band edge could be achieved, e.g., by p doping. This requires, however, a more specific study (Refs.).
    • Though doping effects are not included in our approach, a possibility to tune the position of the Fermi level and to pin it at the valence band edge could be achieved, e.g., by p doping. This requires, however, a more specific study (Refs.).


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