Phase field modeling of submonolayer epitaxial growth

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 23, 2010, Pages

  Ming, Fan ^a   Zangwill, Andrew ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956337852     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.235431     Document Type: Article

References (22)

1. H. Mehl, O. Biham, I. Furman, and M. Karimi, Phys. Rev. B 60, 2106 (1999). 10.1103/PhysRevB.60.2106
2. A. Bogicevic, J. Stromquist, and B. I. Lundqvist, Phys. Rev. Lett. 81, 637 (1998). 10.1103/PhysRevLett.81.637
3. A. Pimpinelli and J. Villain, Physics of Crystal Growth (Cambridge University Press, Cambridge, 1998). 10.1017/CBO9780511622526
4. J. W. Evans, P. A. Thiel, and M. C. Bartelt, Surf. Sci. Rep. 61, 1 (2006). 10.1016/j.surfrep.2005.08.004
5. S. Stoyanov and D. Kashchiev, in Current Topic in Materials Science, edited by, E. Kaldis, (North-Holland, Amsterdam, 1981), Vol. 7, pp. 69-141.
6. J. A. Venables, G. D. T. Spiller, and M. Hanbücken, Rep. Prog. Phys. 47, 399 (1984). 10.1088/0034-4885/47/4/002
7. M. C. Bartelt and J. W. Evans, Phys. Rev. B 46, 12675 (1992). 10.1103/PhysRevB.46.12675
8. C. Ratsch, P. Šmilauer, A. Zangwill, and D. D. Vvedensky, Surf. Sci. 329, L599 (1995). 10.1016/0039-6028(95)00353-3
9. J. G. Amar, F. Family, and M. N. Popescu, Comput. Phys. Commun. 146, 1 (2002). 10.1016/S0010-4655(02)00428-9
10. S. Chen, B. Merriman, S. Osher, and P. Smereka, J. Comput. Phys. 135, 8 (1997). 10.1006/jcph.1997.5721
11. M. F. Gyure, C. Ratsch, B. Merriman, R. E. Caflisch, S. Osher, J. J. Zinck, and D. D. Vvedensky, Phys. Rev. E 58, R6927 (1998). 10.1103/PhysRevE.58. R6927
12. C. Ratsch, M. F. Gyure, S. Chen, M. Kang, and D. D. Vvedensky, Phys. Rev. B 61, R10598 (2000). 10.1103/PhysRevB.61.R10598
13. C. Ratsch, M. Kang, and R. E. Caflisch, Phys. Rev. E 64, 020601 (2001). 10.1103/PhysRevE.64.020601
14. Y. M. Yu and B. G. Liu, Phys. Rev. E 69, 021601 (2004). 10.1103/PhysRevE.69.021601
15. H. Emmerich, Adv. Phys. 57, 1 (2008). 10.1080/00018730701822522
16. W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. London, Ser. A 243, 299 (1951). 10.1098/rsta.1951.0006
17. A. Karma and W. J. Rappel, Phys. Rev. E 53, R3017 (1996). 10.1103/PhysRevE.53.R3017
18. O. Pierre-Louis, Phys. Rev. E 68, 021604 (2003). 10.1103/PhysRevE.68. 021604
19. In principle, the value of u e q affects both the nucleation rate and the growth rate of nucleated islands. However, for our choices of the other parameters, we find that the simulations results are very insensitive to the exact value of u e q. For that reason, we have set u e q = 0 in this paper.
20. J. A. Stroscio and D. T. Pierce, Phys. Rev. B 49, 8522 (1994). 10.1103/PhysRevB.49.8522
21. M. Petersen, C. Ratsch, R. E. Caflisch, and A. Zangwill, Phys. Rev. E 64, 061602 (2001). 10.1103/PhysRevE.64.061602
22. N. Provatas, N. Goldenfeld, and J. Dantzig, J. Comput. Phys. 148, 265 (1999). 10.1006/jcph.1998.6122