Large positive magnetoresistance of the lightly doped La2 CuO4 Mott insulator

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 23, 2010, Pages

  Raicevic I ^a   Popović, Dragana ^a   Panagopoulos, C ^b,c   Sasagawa, T ^d  

^a Florida State University   (United States)

^b UNIVERSITY OF CRETE   (Greece)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956326584     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.235104     Document Type: Article

References (44)

1. M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 1039 (1998). 10.1103/RevModPhys.70.1039
2. E. Dagotto, Science 309, 257 (2005). 10.1126/science.1107559
3. F. C. Chou, N. R. Belk, M. A. Kastner, R. J. Birgeneau, and A. Aharony, Phys. Rev. Lett. 75, 2204 (1995). 10.1103/PhysRevLett.75.2204
4. C. Niedermayer, C. Bernhard, T. Blasius, A. Golnik, A. Moodenbaugh, and J. I. Budnick, Phys. Rev. Lett. 80, 3843 (1998). 10.1103/PhysRevLett.80.3843
5. M.-H. Julien, F. Borsa, P. Carretta, M. Horvatić, C. Berthier, and C. T. Lin, Phys. Rev. Lett. 83, 604 (1999). 10.1103/PhysRevLett.83.604
6. S. Wakimoto, S. Ueki, Y. Endoh, and K. Yamada, Phys. Rev. B 62, 3547 (2000). 10.1103/PhysRevB.62.3547
7. C. Panagopoulos, J. L. Tallon, B. D. Rainford, T. Xiang, J. R. Cooper, and C. A. Scott, Phys. Rev. B 66, 064501 (2002). 10.1103/PhysRevB.66.064501
8. I. Raičević, J. Jaroszyński, D. Popović, C. Panagopoulos, and T. Sasagawa, Phys. Rev. Lett. 101, 177004 (2008). 10.1103/PhysRevLett.101.177004
9. G. R. Jelbert, T. Sasagawa, J. D. Fletcher, T. Park, J. D. Thompson, and C. Panagopoulos, Phys. Rev. B 78, 132513 (2008). 10.1103/PhysRevB.78.132513
10. E. Miranda and V. Dobrosavljević, Rep. Prog. Phys. 68, 2337 (2005). 10.1088/0034-4885/68/10/R02
11. C. Panagopoulos and V. Dobrosavljević, Phys. Rev. B 72, 014536 (2005). 10.1103/PhysRevB.72.014536
12. T. Thio, T. R. Thurston, N. W. Preyer, P. J. Picone, M. A. Kastner, H. P. Jenssen, D. R. Gabbe, C. Y. Chen, R. J. Birgeneau, and A. Aharony, Phys. Rev. B 38, 905 (1988). 10.1103/PhysRevB.38.905
13. T. Thio, C. Y. Chen, B. S. Freer, D. R. Gabbe, H. P. Jenssen, M. A. Kastner, P. J. Picone, N. W. Preyer, and R. J. Birgeneau, Phys. Rev. B 41, 231 (1990). 10.1103/PhysRevB.41.231
14. A. N. Lavrov, Y. Ando, S. Komiya, and I. Tsukada, Phys. Rev. Lett. 87, 017007 (2001). 10.1103/PhysRevLett.87.017007
15. M. A. Kastner, R. J. Birgeneau, G. Shirane, and Y. Endoh, Rev. Mod. Phys. 70, 897 (1998). 10.1103/RevModPhys.70.897
16. T. Sasagawa, P.-K. Mang, O.-P. Vajk, A. Kapitulnik, and M. Greven, Phys. Rev. B 66, 184512 (2002). 10.1103/PhysRevB.66.184512
17. The Néel T N > 100 K, as determined via magnetic susceptibility measurements in a superconducting quantum interference device magnetometer.
18. J. L. Sarrao, D. P. Young, Z. Fisk, E. G. Moshopoulou, J. D. Thompson, B. C. Chakoumakos, and S. E. Nagler, Phys. Rev. B 54, 12014 (1996). 10.1103/PhysRevB.54.12014
19. T. Park, Z. Nussinov, K. R. A. Hazzard, V. A. Sidorov, A. V. Balatsky, J. L. Sarrao, S.-W. Cheong, M. F. Hundley, Jang-Sik Lee, Q. X. Jia, and J. D. Thompson, Phys. Rev. Lett. 94, 017002 (2005). 10.1103/PhysRevLett.94.017002
20. M. A. Kastner, R. J. Birgeneau, C. Y. Chen, Y. M. Chiang, D. R. Gabbe, H. P. Jenssen, T. Junk, C. J. Peters, P. J. Picone, T. Thio, T. R. Thurston, and H. L. Tuller, Phys. Rev. B 37, 111 (1988). 10.1103/PhysRevB.37.111
21. T. Sasagawa, K. Kishio, Y. Togawa, J. Shimoyama, and K. Kitazawa, Phys. Rev. Lett. 80, 4297 (1998). 10.1103/PhysRevLett.80.4297
22. N. E. Hussey, J. R. Cooper, Y. Kodama, and Y. Nishihara, Phys. Rev. B 58, R611 (1998). 10.1103/PhysRevB.58.R611
23. A. N. Lavrov, Y. Ando, K. Segawa, and J. Takeya, Phys. Rev. Lett. 83, 1419 (1999). 10.1103/PhysRevLett.83.1419
24. Y. Ando, A. N. Lavrov, S. Komiya, K. Segawa, and X. F. Sun, Phys. Rev. Lett. 87, 017001 (2001). 10.1103/PhysRevLett.87.017001
25. S. Komiya, Y. Ando, X. F. Sun, and A. N. Lavrov, Phys. Rev. B 65, 214535 (2002). 10.1103/PhysRevB.65.214535
26. S. Ono, S. Komiya, A. N. Lavrov, Y. Ando, F. F. Balakirev, J. B. Betts, and G. S. Boebinger, Phys. Rev. B 70, 184527 (2004). 10.1103/PhysRevB.70.184527
27. M. Z. Cieplak, A. Malinowski, S. Guha, and M. Berkowski, Phys. Rev. Lett. 92, 187003 (2004). 10.1103/PhysRevLett.92.187003
28. Y. Ando, A. N. Lavrov, and S. Komiya, Phys. Rev. Lett. 90, 247003 (2003). 10.1103/PhysRevLett.90.247003
29. V. N. Kotov, O. P. Sushkov, M. B. Silva Neto, L. Benfatto, and A. H. Castro Neto, Phys. Rev. B 76, 224512 (2007). 10.1103/PhysRevB.76.224512
30. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
31. A. Kurobe and H. Kamimura, J. Phys. Soc. Jpn. 51, 1904 (1982). 10.1143/JPSJ.51.1904
32. Y. Meir, Europhys. Lett. 33, 471 (1996). 10.1209/epl/i1996-00365-x
33. A. Frydman and Z. Ovadyahu, Solid State Commun. 94, 745 (1995). 10.1016/0038-1098(95)00141-7
34. W. Jiang, J. L. Peng, J. J. Hamilton, and R. L. Greene, Phys. Rev. B 49, 690 (1994). 10.1103/PhysRevB.49.690
35. - 1 [N = (2 - 13) / (eV cell) (Ref.)].
36. R. L. Greene, H. Maletta, T. S. Plaskett, J. G. Bednorz, and K. A. Müller, Solid State Commun. 63, 379 (1987). 10.1016/0038-1098(87)91133-1
37. ′ ∼ 220 K.
38. Z. Ovadyahu and M. Pollak, Phys. Rev. Lett. 79, 459 (1997). 10.1103/PhysRevLett.79.459
39. K. M. Mertes, D. Simonian, M. P. Sarachik, S. V. Kravchenko, and T. M. Klapwijk, Phys. Rev. B 60, R5093 (1999). 10.1103/PhysRevB.60.R5093
40. V. Yu. Butko, J. F. DiTusa, and P. W. Adams, Phys. Rev. Lett. 85, 162 (2000). 10.1103/PhysRevLett.85.162
41. L. M. Hernandez, A. Bhattacharya, K. A. Parendo, and A. M. Goldman, Phys. Rev. Lett. 91, 126801 (2003). 10.1103/PhysRevLett.91.126801
42. J. Jaroszyński and D. Popović, Phys. Rev. Lett. 99, 046405 (2007). 10.1103/PhysRevLett.99.046405
43. D. J. Schwab and S. Chakravarty, Phys. Rev. B 79, 125102 (2009). 10.1103/PhysRevB.79.125102
44. Y. Ando, A. N. Lavrov, and K. Segawa, Phys. Rev. Lett. 83, 2813 (1999). 10.1103/PhysRevLett.83.2813