Thermoelectric figure of merit of ( In0.53 Ga0.47 As )0.8 ( In0.52 Al0.48 As ) 0.2 III-V semiconductor alloys

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 23, 2010, Pages

  Bahk, Je Hyeong ^a   Bian, Zhixi ^b   Zebarjadi, Mona ^b   Zide, Joshua M O ^c   Lu, Hong ^a   Xu, Dongyan ^d   Feser, Joseph P ^d   Zeng, Gehong ^a   Majumdar, Arun ^d   Gossard, Arthur C ^a   Shakouri, Ali ^b   Bowers, John E ^a  

^a University of California   (United States)

^b University of California Santa Cruz   (United States)

^c UNIVERSITY OF DELAWARE   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956308223     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.235209     Document Type: Article

References (31)

1. G. J. Snyder and E. S. Toberer, Nature Mater. 7, 105 (2008). 10.1038/nmat2090
2. Q. L. Ye, T. Yamada, H. Liu, R. Scheffler, N. Mingo, and R. Leverenz, Semiconductor Nanowires - Fabrication, Physical Properties, and Applications, edited by, V. Schmidt, (MRS Symposia Proceedings No. 940E (Materials Research Society, Warrendale, PA, 2006), p. P07-05.
3. H. D. Park, S. M. Prokes, M. E. Twigg, Y. Ding, and Z. L. Wang, J. Cryst. Growth 304, 399 (2007). 10.1016/j.jcrysgro.2007.03.023
4. A. I. Persson, L. E. Fröberg, L. Samuelson, and H. Linke, Nanotechnology 20, 225304 (2009). 10.1088/0957-4484/20/22/225304
5. D. C. Driscoll, M. P. Hanson, E. Mueller, and A. C. Gossard, J. Cryst. Growth 251, 243 (2003). 10.1016/S0022-0248(02)02511-3
6. D. O. Klenov, D. C. Driscoll, A. C. Gossard, and S. Stemmer, Appl. Phys. Lett. 86, 111912 (2005). 10.1063/1.1885172
7. R. Bowers, R. W. Ure, J. E. Bauerle, and A. J. Cornish, J. Appl. Phys. 30, 930 (1959). 10.1063/1.1735264
8. D. L. Rode, Phys. Rev. B 3, 3287 (1971). 10.1103/PhysRevB.3.3287
9. N. Mingo, Appl. Phys. Lett. 84, 2652 (2004) 10.1063/1.1695629
10. N. Mingo, Appl. Phys. Lett. 88, 149902 (2006) (erratum). 10.1063/1.2192639
11. B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jianga, and G. Pomrenke, Appl. Phys. Lett. 92, 042112 (2008). 10.1063/1.2839309
12. A. Sztein, H. Ohta, J. Sonoda, A. Ramu, J. E. Bowers, S. P. DenBaars, and S. Nakamura, Appl. Phys. Express 2, 111003 (2009). 10.1143/APEX.2.111003
13. W. Kim, J. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar, Phys. Rev. Lett. 96, 045901 (2006). 10.1103/PhysRevLett.96.045901
14. M. Zebarjadi, K. Esfarjani, A. Shakouri, J.-H. Bahk, Z. Bian, G. Zeng, J. Bowers, H. Lu, J. Zide, and A. Gossard, Appl. Phys. Lett. 94, 202105 (2009). 10.1063/1.3132057
15. J. D. Oliver, L. F. Eastman, P. D. Kirchner, and W. J. Schaff, J. Cryst. Growth 54, 64 (1981). 10.1016/0022-0248(81)90250-5
16. Y. Takeda, M. A. Littlejohn, and J. R. Hauser, Electron. Lett. 17, 377 (1981). 10.1049/el:19810265
17. S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley-Interscience, New York, 1992). 10.1002/352760281X
18. M. Lundstrom, Fundamentals of Carrier Transport, 2nd ed. (Cambridge University Press, Cambridge, England, 2000). 10.1017/CBO9780511618611
19. G. S. Nolas, J. Sharp, and H. J. Goldsmid, Thermoelectrics: Basic Principles and New Materials Developments (Springer-Verlag, Berlin, 2001).
20. A. Shakouri, E. Y. Lee, D. L. Smith, V. Narayanamurti, and J. E. Bowers, Nanosc. Microsc. Therm. 2, 37 (1998). 10.1080/108939598200097
21. H. Brooks, Adv. Electron. Electron Phys. 7, 85 (1955). 10.1016/S0065-2539(08)60957-9
22. J. W. Harrison and J. R. Hauser, Phys. Rev. B 13, 5347 (1976). 10.1103/PhysRevB.13.5347
23. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Holt, Rinehart, and Winston, New York, 1976), Chap.
24. J. R. Drabble and H. J. Goldsmid, Thermal Conduction in Semiconductors (Pergamon, New York, 1961).
25. J.-H. Bahk, G. Zeng, J. M. O. Zide, H. Lu, R. Singh, D. Liang, A. T. Ramu, Z. Bian, A. Shakouri, A. C. Gossard, and J. E. Bowers, J. Electron. Mater. (to be published).
26. L. J. Van der Pauw, Philips Res. Rep. 13, 1 (1958).
27. Semiconductors-Group IV Elements, IV-IV and III-V Compounds, Landolt-Börnstein New Series, Group III: Condensed Matter Vol. 41A1b, edited by, H. Rössler, (Springer, Heidelberg, 2002).
28. R. Borroff, R. Merlin, A. Chin, and P. K. Bhattacharya, Appl. Phys. Lett. 53, 1652 (1988). 10.1063/1.100441
29. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001). 10.1063/1.1368156
30. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989). 10.1103/PhysRevB.39. 1871
31. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, Solid-State Electron. 21, 107 (1978). 10.1016/0038-1101(78)90123-5