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Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 23, 2010, Pages

Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures

(3) Zhang, L B a Zhai, Feng b Chang, Kai a

a INSTITUTE OF SEMICONDUCTORS (China)

b DALIAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956300925 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.81.235323 Document Type: Article

Times cited : (32)

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