Characterization and ferroelectricity of Bi and Fe co-doped PZT films

Materials Science and Engineering: B

Volumn 173, Issue 1-3, 2010, Pages 18-20

  Cross, J S ^a   Shinozaki, K ^a   Yoshioka, T ^a   Tanaka, J ^a   Kim, S H ^b   Morioka, H ^c   Saito, K ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INOSTEK Inc   (South Korea)

^c BRUKER AXS INC   (United States)

Author keywords

Doping effects; Ferroelectric; Films; Oxides; Polarization; PZT

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRIC THIN FILMS; IRON; IRON COMPOUNDS; POLARIZATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR DOPING;

CO-DOPED; CO-DOPING; DOPING EFFECTS; FERROELECTRIC PROPERTY; FERROELECTRIC RANDOM ACCESS MEMORY; MEMORY APPLICATIONS; PZT; PZT FILM; SAMPLE STAGES; XRD PATTERNS;

FERROELECTRICITY;

EID: 77956265238     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.02.005     Document Type: Conference Paper

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