Growth of ultra-thin fluoride heterostructures on Ge(1 1 1) for quantum devices

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2224-2226

  Oshita, Takao ^a   Takahashi, Keita ^a   Tsutsui, Kazuo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Alloys; B1. Cadmium compounds; B1. Calcium compounds; B1. Fluorides; B2. Semiconducting germanium

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; CALCIUM; CALCIUM ALLOYS; CALCIUM COMPOUNDS; CHEMICAL REACTIVITY; CRYSTAL GROWTH; EPITAXIAL GROWTH; FLUORINE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON ALLOYS; SUBSTRATES;

A3. MOLECULAR BEAM EPITAXY; B1. ALLOYS; B1. CADMIUM COMPOUNDS; B1. CALCIUM COMPOUNDS; B1. FLUORIDES; B2. SEMICONDUCTING GERMANIUM;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 63349097826     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.080     Document Type: Article

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