SCOPUS 정보 검색 플랫폼

Volumn 518, Issue 22, 2010, Pages 6232-6235

Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes

(4) Park, Jaehoon a Kang, Jong Mook b Kim, Dong Wook c Choi, Jong Sun c

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

c Hong Ik University (South Korea)

Author keywords

Contact resistance; Organic thin film transistors; Surface current; Vacuum thermal evaporation

Indexed keywords

CHARACTERISTIC IMPROVEMENT; CONTACT PROPERTIES; DEVICE PERFORMANCE; GATE VOLTAGES; OFF-STATE CURRENT; ORGANIC THIN FILM TRANSISTORS; RESISTANCE VARIATIONS; SHORT CHANNELS; SOURCE/DRAIN ELECTRODES; SURFACE CURRENT; VACUUM THERMAL EVAPORATION;

CONTACT RESISTANCE; DEPOSITION RATES; ELECTRODES; GOLD; GOLD COATINGS; THERMAL EVAPORATION; VACUUM; VACUUM EVAPORATION;

THIN FILM TRANSISTORS;

EID: 77956058251 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.168 Document Type: Conference Paper

Times cited : (17)

References (14)

1
- 0036999620
- W.F. Aerts, S. Verlaak, and P. Heremans IEEE Trans. Electron Devices 49 2002 2124
- (2002) IEEE Trans. Electron Devices , vol.49 , pp. 2124
- Aerts, W.F.¹ Verlaak, S.² Heremans, P.³

2
- 18744383136
- H. Klauk, M. Halik, U. Zschieschang, G. Schmid, R. Radlik, and W. Weber J. Appl. Phys. 92 2002 5259
- (2002) J. Appl. Phys. , vol.92 , pp. 5259
- Klauk, H.¹ Halik, M.² Zschieschang, U.³ Schmid, G.⁴ Radlik, R.⁵ Weber, W.⁶

3
- 0037421351
- J. Xue, and S.R. Forrest Appl. Phys. Lett. 82 2003 136
- (2003) Appl. Phys. Lett. , vol.82 , pp. 136
- Xue, J.¹ Forrest, S.R.²

4
- 0037290332
- H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C.D. Sheraw, J.A. Nichols, and T.N. Jackson Solid-State Electron. 47 2003 297
- (2003) Solid-State Electron. , vol.47 , pp. 297
- Klauk, H.¹ Schmid, G.² Radlik, W.³ Weber, W.⁴ Zhou, L.⁵ Sheraw, C.D.⁶ Nichols, J.A.⁷ Jackson, T.N.⁸

5
- 39449106353
- M. Xu, M. Nakamura, and K. Kudo Thin Solid Films 516 2008 2776
- (2008) Thin Solid Films , vol.516 , pp. 2776
- Xu, M.¹ Nakamura, M.² Kudo, K.³

6
- 27644501932
- C.W. Chu, S.H. Li, C.W. Chen, V. Shrotriya, and Y. Yang Appl. Phys. Lett. 87 2005 193508
- (2005) Appl. Phys. Lett. , vol.87 , pp. 193508
- Chu, C.W.¹ Li, S.H.² Chen, C.W.³ Shrotriya, V.⁴ Yang, Y.⁵

7
- 70449850363
- B.H. Hamdani, and D. Natelson Appl. Phys. Lett. 84 2004 19
- (2004) Appl. Phys. Lett. , vol.84 , pp. 19
- Hamdani, B.H.¹ Natelson, D.²

8
- 70450040002
- J. Li, X.W. Zhang, L. Zhang, K. Haq, X.Y. Jiang, W.Q. Zhu, and Z.L. Zhang Semicond. Sci. Technol. 24 2009 115012
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 115012
- Li, J.¹ Zhang, X.W.² Zhang, L.³ Haq, K.⁴ Jiang, X.Y.⁵ Zhu, W.Q.⁶ Zhang, Z.L.⁷

9
- 60849083823
- J.-H. Bae, W.-H. Kim, C.J. Yu, and S.-D. Lee Jpn. J. Appl. Phys. 48 2009 020209
- (2009) Jpn. J. Appl. Phys. , vol.48 , pp. 020209
- Bae, J.-H.¹ Kim, W.-H.² Yu, C.J.³ Lee, S.-D.⁴

10
- 0004005306
- John Wiley & Sons New Jersey
- S.M. Sze, and K.K. NG Physics of Semiconductor Devices 2007 John Wiley & Sons New Jersey p. 306
- (2007) Physics of Semiconductor Devices
- Sze, S.M.¹ K, N.G.K.²

11
- 28844464430
- J. Park, and J.S. Choi Synth. Met. 155 2005 657
- (2005) Synth. Met. , vol.155 , pp. 657
- Park, J.¹ Choi, J.S.²

12
- 0038650905
- J. Zaumseil, K.W. Baldwin, and J.A. Rogers J. Appl. Phys. 93 2003 6117
- (2003) J. Appl. Phys. , vol.93 , pp. 6117
- Zaumseil, J.¹ Baldwin, K.W.² Rogers, J.A.³

13
- 0842333231
- G.B. Blanchet, C.R. Fincher, and M. Lefenfeld Appl. Phys. Lett. 84 2004 296
- (2004) Appl. Phys. Lett. , vol.84 , pp. 296
- Blanchet, G.B.¹ Fincher, C.R.² Lefenfeld, M.³

14
- 0037290286
- P.V. Necliudov, M.S. Shur, D.J. Gundlach, and T.N. Jackson Solid-State Electron. 47 2003 259
- (2003) Solid-State Electron. , vol.47 , pp. 259
- Necliudov, P.V.¹ Shur, M.S.² Gundlach, D.J.³ Jackson, T.N.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.