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Volumn 518, Issue 22, 2010, Pages 6179-6183

Optical and electrical properties of ZnO films, codoped with Al and Ga deposited at room temperature by an RF sputtering method

(7) Kim, Jong Pil a Bae, Jong Seong a Hong, Tae Eun a Won, Mi Sook a Yoon, Jang Hee a Lee, Byoung Seob a Lee, Haeng Jung a

a Korea Basic Science Institute (KBSI) (South Korea)

Author keywords

Band gap energy; Codoping Al and Ga doped ZnO; Resistivity; Working pressure

Indexed keywords

BAND GAP ENERGY; CO-DOPED; CO-DOPING; COMPOSITIONAL VARIATION; CYCLO-OLEFIN POLYMERS; ELEMENTAL DISTRIBUTION; FUSED QUARTZ; OPTICAL AND ELECTRICAL PROPERTIES; RESISTIVITY; RF SPUTTERING METHOD; ROOM TEMPERATURE; WORKING PRESSURES; ZNO; ZNO FILMS; ZNO THIN FILM;

ALUMINUM; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM; GALLIUM ALLOYS; METALLIC FILMS; OLEFINS; ORGANIC POLYMERS; OXYGEN; QUARTZ; SINGLE CRYSTALS; THIN FILMS; ZINC; ZINC OXIDE;

POLYMER FILMS;

EID: 77956057888 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.04.050 Document Type: Conference Paper

Times cited : (22)

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