Investigation of radiation hardness of germanium photovoltaic cells

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2190-2194

  Hoheisel, Raymond ^a   Fernandez, Jara ^a   Dimroth, Frank ^a   Bett, Andreas W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Germanium (Ge); photovoltaic cells; photovoltaic space power systems; radiation effects

Indexed keywords

1550 NM; ABSORPTION TRANSITIONS; CURRENT LIMITING; DOPED SUBSTRATES; ELECTRON EXPOSURE; FREE CARRIER ABSORPTION; HIGH EFFICIENCY; IRRADIATION DOSE; MEASUREMENT RESULTS; P-TYPE SUBSTRATES; PARTICLE IRRADIATION; PASSIVATION LAYER; PHOTOVOLTAIC DEVICES; RADIATION HARDNESS; SPACE CONDITIONS; SPACE POWER SYSTEMS; SUBSTRATE DOPING; TRIPLE JUNCTION SOLAR CELLS;

ABSORPTION; DOPING (ADDITIVES); HARDNESS; IRRADIATION; PASSIVATION; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; RADIATION EFFECTS; SPACECRAFT POWER SUPPLIES; SUBSTRATES;

GERMANIUM;

EID: 77956057140     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2053491     Document Type: Article

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