Analysis of radiation hardness of rear-surface passivated germanium photovoltaic cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000861-000864

  Hoheisel, Raymond ^a   Fernandez, Jara ^a   Dimroth, Frank ^a   Bett, Andreas W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION TRANSITIONS; BASE LAYER DOPING; BASE LAYERS; BULK MATERIALS; END-OF-LIFE; FLUENCES; GERMANIUM SOLAR CELL; IRRADIATION DOSE; MEV-ELECTRONS; P-N JUNCTION; RADIATION HARDNESS; SOLAR CELL TECHNOLOGY;

ABSORPTION; DOPING (ADDITIVES); ELECTRON IRRADIATION; GERMANIUM; HARDNESS; PASSIVATION; PHOTOVOLTAIC CELLS;

SOLAR CELLS;

EID: 77951581597     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411151     Document Type: Conference Paper

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