Defect activation in willemite-type Zn2GeO4 by nanocrystallization

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Takahashi, Yoshihiro ^a   Ando, Masataka ^a   Iwasaki, Kenichiro ^a   Masai, Hirokazu ^b   Fujiwara, Takumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTIONALIZATIONS; LONG LASTING; NANOCRYSTALLIZED GLASS; NEW APPROACHES; SEMICONDUCTIVE; SIX-MEMBERED RINGS; ZINC IONS; ZNO;

DEFECTS; GLASS; NANOCRYSTALLIZATION; ZINC OXIDE;

ZINC;

EID: 77956038012     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481081     Document Type: Article

References (23)

1. Y. Noguchi, I. Miwa, Y. Goshima, and M. Miyayama, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 39, L1259 (2000). 10.1143/JJAP.39.L1259
2. J. B. Yi, C. C. Lim, G. Z. Xing, H. M. Fan, L. H. Van, S. L. Huang, K. S. Yang, X. L. Huang, X. B. Qin, B. Y. Wang, T. Wu, L. Wang, H. T. Zhang, X. Y. Gao, T. Liu, A. T. S. Wee, Y. P. Feng, and J. Ding, Phys. Rev. Lett. PRLTAO 0031-9007 104, 137201 (2010). 10.1103/PhysRevLett.104.137201
3. T. Nagata, P. Ahmet, Y. Sakuma, T. Sekiguchi, and T. Chikyow, Appl. Phys. Lett. APPLAB 0003-6951 87, 013103 (2005). 10.1063/1.1968435
4. K. Suriye, P. Praserthdam, and B. Jongsomjit, Appl. Surf. Sci. ASUSEE 0169-4332 253, 3849 (2007). 10.1016/j.apsusc.2006.08.007
5. K. Sato, H. Abe, and S. Ohara, J. Am. Chem. Soc. JACSAT 0002-7863 132, 2538 (2010). 10.1021/ja910712r
6. B. H. Venkataraman, N. S. Prasad, K. B. R. Varma, V. Rodriguez, M. Maglione, R. Vondermuhll, and J. Etourneau, Appl. Phys. Lett. APPLAB 0003-6951 87, 091113 (2005). 10.1063/1.2037198
7. C. Liu, Y. K. Kwon, and J. Heo, Chem. Phys. Lett. CHPLBC 0009-2614 452, 281 (2008). 10.1016/j.cplett.2007.12.076
8. T. Yamazawa, T. Honma, H. Suematsu, and T. Komatsu, J. Am. Ceram. Soc. JACTAW 0002-7820 92, 2924 (2009). 10.1111/j.1551-2916.2009.03348.x
9. Y. Takahashi, M. Osada, H. Masai, and T. Fujiwara, Phys. Rev. B PLRBAQ 0556-2805 79, 214204 (2009). 10.1103/PhysRevB.79.214204
10. Y. Takahashi, H. Masai, and T. Fujiwara, Appl. Phys. Lett. APPLAB 0003-6951 95, 071904 (2009). 10.1063/1.3206931
11. J. Sato, H. Kobayashi, K. Ikarashi, N. Saito, H. Nishiyama, and Y. Inoue, J. Phys. Chem. B JPCBFK 1089-5647 108, 4369 (2004). 10.1021/jp0373189
12. L. C. Williams, D. Norton, J. Budai, and P. H. Holloway, J. Electrochem. Soc. JESOAN 0013-4651 151, H188 (2004). 10.1149/1.1767159
13. J. P. Bender, J. F. Wager, J. Kissick, B. L. Clark, and D. A. Keszler, J. Lumin. JLUMA8 0022-2313 99, 311 (2002). 10.1016/S0022-2313(02)00349-6
14. J. Huang, X. Wang, Y. Hou, Z. Chen, L. Wu, and X. Fu, Environ. Sci. Technol. ESTHAG 0013-936X 42, 7387 (2008). 10.1021/es800744e
15. C. Yan, N. Singh, and P. S. Lee, Appl. Phys. Lett. APPLAB 0003-6951 96, 053108 (2010). 10.1063/1.3297905
16. Z. Liu, Z. Jing, and L. Wang, J. Electrochem. Soc. JESOAN 0013-4651 154, H500 (2007). 10.1149/1.2720769
17. S. P. Feofilov, A. A. Kaplyanskii, A. B. Kulinkin, R. S. Meltzer, and T. N. Vasilevskaya, J. Lumin. JLUMA8 0022-2313 100, 155 (2002). 10.1016/S0022-2313(02)00452-0
18. T. Yamazaki, M. Imaoka, and I. Yasui, Rep. Inst. Ind. Sci. Univ. Tokyo 0040-9006 31, 103 (1984).
19. ICDD card No. 11-0687.
20. ICDD card No. 37-1363.
21. C. Hang, M. A. Simonov, and N. V. Belov, Sov. Phys. Crystallogr. USSR SPHCA6 0038-5638 15, 387 (1970).
22. H. Hosono, Y. Abe, D. L. Kinser, R. A. Weeks, K. Murata, and H. Kawazoe, Phys. Rev. B PLRBAQ 0556-2805 46, 11445 (1992). 10.1103/PhysRevB.46.11445
23. K. Momma and F. Izumi, J. Appl. Crystallogr. JACGAR 0021-8898 41, 653 (2008). 10.1107/S0021889808012016