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Applied Physics Letters

Volumn 87, Issue 1, 2005, Pages

GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition

(5) Nagata, T a Ahmet, P b Sakuma, Y b Sekiguchi, T b Chikyow, T b

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FOVUSED-ION-BEAM-ASSISTED CHEMICAL VAPOR DEPOSITIONS; NANOSTRUCTRES; NEAR-BAND-EDGE EMISSIONS; NITRIDATION;

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; FREE RADICALS; ION BEAM ASSISTED DEPOSITION; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SURFACE PHENOMENA;

GALLIUM NITRIDE;

EID: 24144454219 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1968435 Document Type: Article

Times cited : (12)

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