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Volumn 505, Issue 2, 2010, Pages 592-597
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Electrical, optical and photoelectrochemical properties of BaSnO 3-δ: Applications to hydrogen evolution
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Author keywords
Electrochemical reactions; Electrode materials; Grain boundaries; Hetero junction; Semiconductors; X ray diffraction
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Indexed keywords
BAND GAPS;
BULK CONTRIBUTIONS;
CONCOMITANT REDUCTION;
CORROSION POTENTIALS;
DELAFOSSITE CUFEO;
DELOCALIZATIONS;
DIFFUSION LENGTH;
ELECTROCHEMICAL REACTIONS;
ELECTRODE MATERIAL;
ELECTRON DENSITIES;
FLAT BAND POTENTIAL;
HYDROGEN EVOLUTION;
INDIRECT TRANSITION;
LATTICE POLARONS;
N-TYPE CONDUCTIVITY;
NYQUIST;
OXIDATION PROCESS;
OXYGEN DEFICIENCY;
PARALLEL CIRCUITS;
PENETRATION DEPTH;
PH RANGE;
PHOTOELECTROCHEMICAL MEASUREMENTS;
PHOTOELECTROCHEMICAL PROPERTIES;
PHOTORESPONSES;
PLATEAU REGION;
POTENTIAL CURVES;
SEMI-LOGARITHMIC PLOTS;
SEMICONDUCTORS;
THERMAL VARIATION;
ACTIVATION ENERGY;
CAPACITANCE MEASUREMENT;
CHEMICAL STABILITY;
COPPER COMPOUNDS;
CYCLIC VOLTAMMETRY;
DIFFRACTION;
ELECTRIC PROPERTIES;
ELECTROCHEMICAL CORROSION;
ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
HYDROGEN;
LANTHANUM COMPOUNDS;
OXYGEN;
SEMICONDUCTOR JUNCTIONS;
TIN;
TRANSPORT PROPERTIES;
X RAY DIFFRACTION;
ELECTROCHEMICAL ELECTRODES;
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EID: 77955927150
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2010.06.081 Document Type: Article |
Times cited : (34)
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References (28)
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