Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current: An advanced model

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Micard, G ^a   Hahn, G ^a   Zuschlag, A ^a   Seren, S ^a   Terheiden, B ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; BEAM RADIUS; DIFFUSION LENGTH; ELECTRICAL PARAMETER; LASER WAVELENGTH; LIGHT BEAM INDUCED CURRENTS; LINESCAN; MATERIAL FEATURES; MEASURED DATA; MEASUREMENT TECHNIQUES; MULTICRYSTALLINE; QUANTITATIVE EVALUATION; SMALL GRAINS; SURFACE RECOMBINATION VELOCITIES;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INDUCED CURRENTS; MATHEMATICAL MODELS;

SEMICONDUCTOR LASERS;

EID: 77955884088     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462447     Document Type: Article

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