Effect of oxalic acid concentration on the formation of anodic aluminum oxide using pulse anodization at room temperature

Microsystem Technologies

Volumn 16, Issue 8-9, 2010, Pages 1451-1456

  Chung, Chen Kuei ^a   Liu, T Y ^a   Chang, W T ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACID CONCENTRATIONS; ALUMINUM FILM; ANODIC ALUMINUM OXIDE; ANODIZATIONS; COMMERCIAL PURITY; ELECTROLYTIC CONCENTRATION; HIGH-PURITY; LOW TEMPERATURES; OXALIC ACID; OXIDE LAYER THICKNESS; PORE DIAMETERS; PORE DISTRIBUTION; POTENTIOSTATIC METHODS; PULSE ANODIZATION; ROOM TEMPERATURE; SEM IMAGE;

ALUMINUM; CONCENTRATION (PROCESS); DISSOLUTION; OXIDES;

OXIDE FILMS;

EID: 77955853589     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-009-0944-9     Document Type: Conference Paper

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