Fast high-flux response of CdZnTe X-Ray detectors by optical manipulation of deep level defect occupations

IEEE Transactions on Nuclear Science

Volumn 57, Issue 4 PART 2, 2010, Pages 2397-2399

  Prokesch, Michael ^a   Bale, Derek S ^a   Szeles, Csaba ^a  

^a EV Microelectronics   (United States)

Author keywords

CdZnTe; infra red; photocurrent; semiconductor radiation detectors; temporal response; X ray detectors

Indexed keywords

CDZNTE; INFRA RED; SEMICONDUCTOR RADIATION DETECTORS; TEMPORAL RESPONSE; X-RAY DETECTOR;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DEFECTS; ENERGY GAP; HOLE CONCENTRATION; HOLE MOBILITY; PHOTONS; POINT DEFECTS; X RAY APPARATUS; X RAYS;

RADIATION DETECTORS;

EID: 77955849731     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2049120     Document Type: Article

References (5)

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3. M. Prokesch and C. Szeles, "Accurate measurement of electrical bulk resistivity and surface leakage of CdZnTe radiation detector crystals," J. Appl. Phys., vol.100, no.1-8, pp. 14503-14510, Jul. 2006.
4. D. S. Bale and C. Szeles, "Multiple-scale analysis of charge transport in semiconductor radiation detectors: Application to semi-insulating CdZnTe," J. Electron. Mater., vol.38, pp. 126-144, Jan. 2009.
5. U.S. Patent Application, 61/100358/2008.