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Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

Preparation, characterization, and upper critical field of epitaxial FeSe thin films

(2) Jourdan, M a Ten Haaf, S a

a JOHANNES GUTENBERG UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY RATIO; ATOMIC RATIO; COHERENCE LENGTHS; COMPOSITIONAL RANGE; EPITAXIAL THIN FILMS; MAXIMUM RATIO; RESIDUAL RESISTANCE RATIOS; UPPER CRITICAL FIELDS;

ANISOTROPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SELENIUM COMPOUNDS; SINGLE CRYSTALS; SUPERCONDUCTIVITY; TRANSPORT PROPERTIES;

FILM PREPARATION;

EID: 77955828441 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3465082 Document Type: Article

Times cited : (23)

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