Synthesis, crystal growth and epitaxial layers growth of FeSe 0,88 superconductor and other poison materials by use of high gas pressure trap system

Journal of Superconductivity and Novel Magnetism

Volumn 22, Issue 6, 2009, Pages 599-602

  Tkachenko, O ^a,b   Morawski, A ^a   Zaleski, A J ^b   Przyslupski, P ^c   Dietl, T ^c   Diduszko, R ^c   Presz, A ^a   Werner Malento, K ^c  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Crystal growth; FeSe; Films; Pressure method; Superconductor; Synthesis

Indexed keywords

DC SPUTTERING; EPITAXIAL LAYERS GROWTH; EPITAXIAL PROCESS; EQUILIBRIUM CONDITIONS; FESE; GAS MEDIUM; GAS PRESSURES; INERT GAS ATMOSPHERE; PRESSURE AND TEMPERATURE; PURE COMPONENTS; RESISTIVITY MEASUREMENT; SEM; SUPERCONDUCTOR; SYNTHESIS; SYNTHESIZED MATERIALS; THIN LAYERS; XRD;

ARGON; CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL FILMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GRAIN BOUNDARIES; INERT GASES; MAGNETIC SUSCEPTIBILITY; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY; SYNTHESIS (CHEMICAL); VAPOR PRESSURE;

GAS PERMEABLE MEMBRANES;

EID: 67650093479     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1007/s10948-009-0457-x     Document Type: Article

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