Enhanced electron-mediated ferromagnetism in Co-doped ZnO nanowires

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Choi, Eun Ae ^a   Lee, Woo Jin ^a   Chang, K J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC STATE; CO IONS; CO-DOPED ZNO; CONDUCTION BAND EDGE; COUPLING PROPERTIES; DENSITY-FUNCTIONAL CALCULATIONS; ELECTRON CONCENTRATION; ELECTRON-DOPING; FERROMAGNETIC STATE; HIGH DOPING LEVEL; WIRE DIAMETER; ZNO;

ANTIFERROMAGNETISM; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONS; FERROMAGNETIC MATERIALS; LANTHANUM COMPOUNDS; MAGNETIC COUPLINGS; NANOWIRES; ZINC OXIDE;

FERROMAGNETISM;

EID: 77955828094     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463412     Document Type: Article

References (34)

1. H. Ohno, Science SCIEAS 0036-8075 281, 951 (1998). 10.1126/science.281. 5379.951
2. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science SCIEAS 0036-8075 287, 1019 (2000). 10.1126/science.287.5455.1019
3. K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. SSTEET 0268-1242 17, 367 (2002). 10.1088/0268-1242/17/4/309
4. P. Sati, C. Deparis, C. Morhain, S. Schäfer, and A. Stepanov, Phys. Rev. Lett. PRLTAO 0031-9007 98, 137204 (2007). 10.1103/PhysRevLett.98.137204
5. H. -J. Lee, S. -Y. Jeong, C. R. Cho, and C. H. Park, Appl. Phys. Lett. APPLAB 0003-6951 81, 4020 (2002). 10.1063/1.1517405
6. Q. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, and H. J. Schmidt, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 42, 085001 (2009). 10.1088/0022-3727/ 42/8/085001
7. E. -C. Lee and K. J. Chang, Phys. Rev. B PLRBAQ 0556-2805 69, 085205 (2004). 10.1103/PhysRevB.69.085205
8. S. Lany, H. Raebiger, and A. Zunger, Phys. Rev. B PLRBAQ 0556-2805 77, 241201 (R) (2008). 10.1103/PhysRevB.77.241201
9. A. Walsh, J. L. F. Da Silva, and S. -H. Wei, Phys. Rev. Lett. PRLTAO 0031-9007 100, 256401 (2008). 10.1103/PhysRevLett.100.256401
10. C. D. Pemmaraju, R. Hanafin, T. Archer, H. B. Braun, and S. Sanvito, Phys. Rev. B PLRBAQ 0556-2805 78, 054428 (2008). 10.1103/PhysRevB.78.054428
11. C. H. Park and D. J. Chadi, Phys. Rev. Lett. PRLTAO 0031-9007 94, 127204 (2005). 10.1103/PhysRevLett.94.127204
12. G. S. Chang, E. Z. Kurmaev, D. W. Boukhvalov, L. D. Finkelstein, S. Colis, T. M. Pedersen, A. Moewes, and A. Dinia, Phys. Rev. B PLRBAQ 0556-2805 75, 195215 (2007). 10.1103/PhysRevB.75.195215
13. H. -J. Lee, E. Helgren, and F. Hellman, Appl. Phys. Lett. APPLAB 0003-6951 94, 212106 (2009). 10.1063/1.3147856
14. H. J. Xiang and S. -H. Wei, Nano Lett. NALEFD 1530-6984 8, 1825 (2008). 10.1021/nl080261n
15. J. B. Cui and U. J. Gibson, Appl. Phys. Lett. APPLAB 0003-6951 87, 133108 (2005). 10.1063/1.2058222
16. H. Wang, H. B. Wang, F. J. Yang, Y. Chen, C. Zhang, C. P. Yang, Q. Li, and S. P. Wong, Nanotechnology NNOTER 0957-4484 17, 4312 (2006). 10.1088/0957-4484/17/17/005
17. T. Yao, W. Yan, Z. Sun, Z. Pan, Y. Xie, Y. Jiang, J. Ye, F. Hu, and S. J. Wei, J. Phys. Chem. C JPCCCK 1932-7447 113, 14114 (2009).
18. I. -J. Chen, Y. -C. Ou, Z. -Y. Wu, F. -R. Chen, J. -J. Kai, J. -J. Lin, and W. -B. Jian, J. Phys. Chem. C JPCCCK 1932-7447 112, 9168 (2008). 10.1021/jp711775r
19. L. Liao, H. B. Lu, L. Zhang, M. Shuai, J. C. Li, C. Liu, D. J. Fu, and F. Ren, J. Appl. Phys. JAPIAU 0021-8979 102, 114307 (2007). 10.1063/1.2815629
20. Z. Y. Wu, I. J. Chen, Y. F. Lin, S. P. Chiu, F. R. Chen, J. J. Kai, J. J. Lin, and W. B. Jian, New J. Phys. NJOPFM 1367-2630 10, 033017 (2008). 10.1088/1367-2630/10/3/033017
21. J. P. Perdew, J. A. Chevary, S. H. Vosko, K. A. Jackson, M. R. Pederson, D. J. Singh, and C. Fiolhais, Phys. Rev. B PLRBAQ 0556-2805 46, 6671 (1992). 10.1103/PhysRevB.46.6671
22. P. E. Blöchl, Phys. Rev. B PLRBAQ 0556-2805 50, 17953 (1994). 10.1103/PhysRevB.50.17953
23. G. Kresse and D. Joubert, Phys. Rev. B PLRBAQ 0556-2805 59, 1758 (1999). 10.1103/PhysRevB.59.1758
24. G. Kresse and J. Furthmüller, Phys. Rev. B PLRBAQ 0556-2805 54, 11169 (1996). 10.1103/PhysRevB.54.11169
25. H. J. Monkhorst and J. D. Pack, Phys. Rev. B PLRBAQ 0556-2805 13, 5188 (1976). 10.1103/PhysRevB.13.5188
26. S. C. Wi, J. -S. Kang, J. H. Kim, S. -B. Cho, B. J. Kim, S. Yoon, B. J. Suh, S. W. Han, K. H. Kim, K. J. Kim, B. S. Kim, H. J. Song, H. J. Shin, J. H. Shim, and B. I. Min, Appl. Phys. Lett. APPLAB 0003-6951 84, 4233 (2004). 10.1063/1.1756197
27. M. Toyoda, H. Akai, K. Sato, and H. Katayama-Yoshida, Physica B PHYBE3 0921-4526 376-377, 647 (2006). 10.1016/j.physb.2005.12.163
28. R. W. G. Wyckoff, Crystal Structures, 2nd ed. (Wiley, New York, 1986), Vol. 1, p. 112.
29. H. J. Xiang, J. L. Yang, J. G. Hou, and Q. S. Zhu, Appl. Phys. Lett. APPLAB 0003-6951 89, 223111 (2006). 10.1063/1.2397013
30. B. D. Yuhas, S. Fakra, M. A. Marcus, and P. Yang, Nano Lett. NALEFD 1530-6984 7, 905 (2007). 10.1021/nl0626939
31. C. H. Patterson, Phys. Rev. B PLRBAQ 0556-2805 74, 144432 (2006). 10.1103/PhysRevB.74.144432
32. K. Sato, W. Schweika, P. H. Dederichs, and H. Katayama-Yoshida, Phys. Rev. B PLRBAQ 0556-2805 70, 201202 (R) (2004). 10.1103/PhysRevB.70.201202
33. T. C. Pedersen, Phys. Status Solidi C ZZZZZZ 1610-1634 2, 4026 (2005). 10.1002/pssc.200562222
34. D. R. Khanal, J. W. L. Yim, W. Walukiewicz, and J. Wu, Nano Lett. NALEFD 1530-6984 7, 1186 (2007). 10.1021/nl062886w