Spatially-resolved photoluminescence study of high indium content InGaN LED structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1869-1871

  Tamulaitis, G ^a   Mickevicius J ^a   Dobrovolskas, D ^a   Kuokstis E ^a   Shur, M ^b   Shatalov, M ^c   Yang, J ^c   Gaska, R ^c  

^a VILNIUS UNIVERSITY   (Lithuania)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

Defects; InGaN; LEDs; Photoluminescence; Quantum wells; SNOM

Indexed keywords

EMISSION INTENSITY; GREEN LIGHT; INDIUM CONTENT; INGAN; INGAN LED; INHOMOGENEOUS DISTRIBUTION; LEDS; MULTIPLE QUANTUM WELLS; NONRADIATIVE RECOMBINATION CENTERS; PEAK POSITION; PL BANDS; PL INTENSITY; QUANTUM WELL; SCANNING NEAR-FIELD OPTICAL MICROSCOPY; SNOM; SPECTRAL POSITION;

DEFECTS; LIGHT EMITTING DIODES; NEAR FIELD SCANNING OPTICAL MICROSCOPY; NITRIDES; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955783564     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983477     Document Type: Conference Paper

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