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Volumn 40, Issue 5, 2010, Pages 997-1004
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Deposition of tin oxide, iridium and iridium oxide films by metal-organic chemical vapor deposition for electrochemical wastewater treatment
a,b
a
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Author keywords
Electrochemical oxidation; MOCVD; Specific electrode; Thin film coating; Wastewater treatment
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Indexed keywords
ACTIVE LAYER;
CVD REACTORS;
ELECTROCHEMICAL EXPERIMENTS;
ELECTROCHEMICAL REACTOR;
ELECTROCHEMICAL WASTEWATER TREATMENT;
FILM DEPOSITION;
FIRST-ORDER;
IRIDIUM OXIDES;
KINETIC INVESTIGATIONS;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
MOCVD;
MODEL SOLUTION;
MOLAR RATIO;
OPTIMUM CONDITIONS;
ORGANIC POLLUTANT DEGRADATION;
OXALIC ACID;
PROTECTIVE LAYERS;
REDUCED PRESSURE;
SPECIFIC ELECTRODE;
THIN FILM COATING;
TOC CONCENTRATIONS;
TOTAL PRESSURE;
TWO-STEP PROCESS;
ANODIC OXIDATION;
CHEMICAL OXYGEN DEMAND;
CHEMICALS REMOVAL (WATER TREATMENT);
COATINGS;
ELECTRIC REACTORS;
ELECTROCHEMICAL CELLS;
ELECTROCHEMICAL OXIDATION;
FILM PREPARATION;
INDUSTRIAL CHEMICALS;
IRIDIUM;
IRIDIUM COMPOUNDS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
ORGANIC POLLUTANTS;
OXIDE FILMS;
RECLAMATION;
THIN FILMS;
TIN;
TIN OXIDES;
TITANIUM COMPOUNDS;
WASTEWATER;
WASTEWATER TREATMENT;
WATER TREATMENT PLANTS;
ELECTROCHEMICAL ELECTRODES;
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EID: 77955770617
PISSN: 0021891X
EISSN: None
Source Type: Journal
DOI: 10.1007/s10800-009-9968-1 Document Type: Conference Paper |
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Times cited : (22)
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References (25)
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