Crystal structure of TiO2 thin films grown on sapphire substrates by RF sputtering as a function of temperature

Electronic Materials Letters

Volumn 6, Issue 2, 2010, Pages 77-80

  Lee, Geun Hyoung ^a   Kim, Min Sung ^b  

^a Dong Eui University   (South Korea)

^b TongMyong University   (South Korea)

Author keywords

Crystal structure; Growth temperature; Sapphire substrate; Sputtering; TiO2 film

Indexed keywords

A-PLANE; BAND GAPS; C-PLANE SAPPHIRE; CRYSTAL QUALITIES; EPITAXIALLY GROWN; PLANE SAPPHIRE; PREFERENTIAL ORIENTATION; RF-MAGNETRON SPUTTERING; RF-SPUTTERING; RUTILE STRUCTURE; SAPPHIRE SUBSTRATE; SAPPHIRE SUBSTRATES; SUBSTRATE ORIENTATION; TIO;

DIFFRACTION; GROWTH TEMPERATURE; HOLOGRAPHIC INTERFEROMETRY; MAGNETRON SPUTTERING; OXIDE MINERALS; SAPPHIRE; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

CRYSTAL STRUCTURE;

EID: 77955757453     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: 10.3365/eml.2010.06.077     Document Type: Article

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