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Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy

(8) Kawaguchi, T a,b Uemura, H a,b Ohno, T a,b Tabuchi, M a,b Ujihara, T a,b Takenaka, K a,b Takeda, Y a,b Ikuta, H a,b

a NAGOYA UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH-PROFILE ANALYSIS; EX-SITU ANNEALING; FLUORINE DOPING; GAAS SUBSTRATES; GROWTH TIME; HALL COEFFICIENT MEASUREMENTS; IN-SITU GROWTH; ONSET TEMPERATURE; SUPERCONDUCTING TRANSITIONS; ZERO-RESISTANCE TEMPERATURE;

AUGER ELECTRON SPECTROSCOPY; DOPING (ADDITIVES); ELECTRON PROBE MICROANALYSIS; EPITAXIAL GROWTH; FLUORINE; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; STRONTIUM COMPOUNDS; SUPERCONDUCTIVITY; THIN FILMS;

SUPERCONDUCTING FILMS;

EID: 77955735728 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3464171 Document Type: Article

Times cited : (61)

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