Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

Superlattices and Microstructures

Volumn 48, Issue 1, 2010, Pages 50-57

  Chang, S J ^a   Hsiao, C H ^a   Lan, B W ^a   Hung, S C ^b   Huang, B R ^c   Young, S J ^d   Cheng, Y C ^e   Chih, S H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SHIH CHIEN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^e CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

MBE; Wurtzite; Zinc blende; ZnCdSe nanowire

Indexed keywords

APPLIED BIAS; AS-GROWN; AVERAGE LENGTH; CONTRAST RATIO; HEXAGONAL WURTZITE STRUCTURE; HIGH DENSITY; MBE; SI (100) SUBSTRATE; WURTZITES; ZINC-BLENDE;

EPITAXIAL GROWTH; FABRICATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; ZINC; ZINC SULFIDE;

NANOWIRES;

EID: 77955664056     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2010.04.014     Document Type: Article

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