Optoelectronic properties of transparent p-type semiconductor Cu xS thin films

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 7, 2010, Pages 1652-1654

  Parreira, P ^b   Lavareda, G ^a   Valente, J ^b   Nunes, F T ^a   Amaral, A ^b   De Carvalho, C Nunes ^a,b  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

Cu xS; Electrical transport; Optical properties

Indexed keywords

ACTIVE LAYER; APPLICATION FIELDS; CU XS; ELECTRICAL TRANSPORT; HIGH CONDUCTIVITY; N-TYPE CONDUCTIVITY; NARROW BANDS; OPTICAL TRANSMITTANCE; OPTOELECTRONIC PROPERTIES; P-TYPE; ROOM TEMPERATURE; S THIN FILMS; TRANSPARENT P-TYPE SEMICONDUCTOR; TRANSPARENT SEMICONDUCTOR; VISIBLE RANGE; VISIBLE TRANSMITTANCE; ZNO;

ELECTRIC PROPERTIES; THERMAL EVAPORATION; THICK FILMS; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 77955610487     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983731     Document Type: Article

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