TEM characterization of ALD layers in deep trenches using a dedicated FIB lamellae preparation method

Thin Solid Films

Volumn 518, Issue 16, 2010, Pages 4553-4555

  Gluch, J ^a   Rossler T ^b   Schmidt, D ^b   Menzel, S B ^a   Albert, M ^b   Eckert, J ^a  

^a IFW DRESDEN   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

ALD; Deep trench; Electrode material; FIB; High k insulator; TEM

Indexed keywords

ALD; DEEP TRENCH; ELECTRODE MATERIAL; FIB; HIGH-K INSULATORS; TEM;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; HAFNIUM COMPOUNDS; MICROELECTRONICS; POLYMER BLENDS; TANTALUM COMPOUNDS;

ELECTROCHEMICAL ELECTRODES;

EID: 77955608817     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.029     Document Type: Conference Paper

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