Structural and thermoelectric properties of HfNiSn half-Heusler thin films

Thin Solid Films

Volumn 518, Issue 21, 2010, Pages 5901-5904

  Wang, Shu Hui ^a   Cheng, Hsin Ming ^a   Wu, Ren Jye ^a   Chao, Wen Hsuan ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Combinatorial; Half Heusler; Thermoelectric properties

Indexed keywords

CRYSTALLINE PHASE; DIFFERENT SUBSTRATES; HALF-HEUSLER; HALF-HEUSLER ALLOYS; IN-PLANE; PARTIAL SUBSTITUTION; POLYCRYSTALLINE THIN FILM; POWER FACTORS; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; STRUCTURAL VARIATIONS; SUBSTRATE TEMPERATURE; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; THIN FILM SYSTEMS;

ALLOYS; ELECTRIC POWER FACTOR; SCANNING ELECTRON MICROSCOPY; THERMOELECTRIC EQUIPMENT; THIN FILMS; TIN; VAPOR DEPOSITION; X RAY DIFFRACTION;

THERMOELECTRICITY;

EID: 77955556347     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.05.080     Document Type: Article

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