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Volumn 268, Issue 17-18, 2010, Pages 2688-2693

Simulation of ion-track ranges in uranium oxide

Author keywords

Ion track range; Molecular dynamics; Nuclear fuel materials; REED MD; Uranium oxide

Indexed keywords

EXPERIMENTAL MEASUREMENTS; IMPLANT ENERGY; MATERIALS STRUCTURE; POLYCRYSTALLINE; POLYCRYSTALLINE SAMPLES; RARE EVENT; REED-MD; SINGLE-CRYSTALLINE; TARGET MATERIALS; TRACK RANGE; URANIUM OXIDES;

EID: 77955515659     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.06.004     Document Type: Article
Times cited : (7)

References (15)
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  • 4
    • 58249084602 scopus 로고    scopus 로고
    • Efficient parallel algorithm for statistical ion track simulations in crystalline materials
    • B. Jeon, and N. Grønbech-Jensen Efficient parallel algorithm for statistical ion track simulations in crystalline materials Computer Physics Communications 180 2 2009 231 237
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    • Jeon, B.1    Grønbech-Jensen, N.2
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    • The chemical state of the fission products in oxide fuels
    • H. Kleykamp The chemical state of the fission products in oxide fuels Journal of Nuclear Materials 131 2-3 1985 221 246
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  • 7
    • 0024700428 scopus 로고
    • Safety aspects of fuel behaviour during faults and accidents in pressurised water reactors and in liquid sodium cooled fast breeder reactors
    • J. Gittus, J. Matthews, and P. Potter Safety aspects of fuel behaviour during faults and accidents in pressurised water reactors and in liquid sodium cooled fast breeder reactors Journal of Nuclear Materials 166 1-2 1989 132 159
    • (1989) Journal of Nuclear Materials , vol.166 , Issue.12 , pp. 132-159
    • Gittus, J.1    Matthews, J.2    Potter, P.3
  • 10
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    • Effective stopping-power charges of swift ions in condensed matter
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  • 11
    • 0001569899 scopus 로고    scopus 로고
    • Phenomenological electronic stopping-power model for molecular dynamics and monte carlo simulation of ion implantation into silicon
    • D. Cai, N. Grønbech-Jensen, C.M. Snell, and K.M. Beardmore Phenomenological electronic stopping-power model for molecular dynamics and monte carlo simulation of ion implantation into silicon Physics Review B 54 23 1996 17147 17157
    • (1996) Physics Review B , vol.54 , Issue.23 , pp. 17147-17157
    • Cai, D.1    Grønbech-Jensen, N.2    Snell, C.M.3    Beardmore, K.M.4
  • 12
    • 0029277240 scopus 로고
    • Molecular dynamics simulation of ion ranges in the 1-100 keV energy range
    • K. Nordlund Molecular dynamics simulation of ion ranges in the 1-100 keV energy range Computational Materials Science 3 4 1995 448 456
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    • Nordlund, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.