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Volumn 150, Issue 35-36, 2010, Pages 1610-1613
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Theoretical interpretation of the zero-field splitting parameters for Fe3+ ions in wide-band gap semiconductor TlGaSe2 single crystal
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Author keywords
A. Semiconductors; C. Point defects; D. Crystal and ligand fields; E. Electron paramagnetic resonance
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Indexed keywords
CRYSTAL AND LIGAND FIELDS;
D. CRYSTAL AND LIGAND FIELDS;
E. ELECTRON PARAMAGNETIC RESONANCE;
ELECTRON MAGNETIC RESONANCE;
LOCAL ENVIRONMENTS;
PARAMETER VALUES;
STRUCTURAL DATA;
SUPERPOSITION MODEL;
WIDE-BAND-GAP SEMICONDUCTOR;
ZERO-FIELD SPLITTING PARAMETERS;
ZERO-FIELD SPLITTINGS;
DEFECTS;
ELECTRON RESONANCE;
IONS;
LIGANDS;
PARAMAGNETIC MATERIALS;
POINT DEFECTS;
SINGLE CRYSTALS;
PARAMAGNETIC RESONANCE;
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EID: 77955468646
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2010.06.045 Document Type: Article |
Times cited : (9)
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References (29)
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