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Volumn 150, Issue 35-36, 2010, Pages 1610-1613

Theoretical interpretation of the zero-field splitting parameters for Fe3+ ions in wide-band gap semiconductor TlGaSe2 single crystal

Author keywords

A. Semiconductors; C. Point defects; D. Crystal and ligand fields; E. Electron paramagnetic resonance

Indexed keywords

CRYSTAL AND LIGAND FIELDS; D. CRYSTAL AND LIGAND FIELDS; E. ELECTRON PARAMAGNETIC RESONANCE; ELECTRON MAGNETIC RESONANCE; LOCAL ENVIRONMENTS; PARAMETER VALUES; STRUCTURAL DATA; SUPERPOSITION MODEL; WIDE-BAND-GAP SEMICONDUCTOR; ZERO-FIELD SPLITTING PARAMETERS; ZERO-FIELD SPLITTINGS;

EID: 77955468646     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.06.045     Document Type: Article
Times cited : (9)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.