Modeling local distortions around Fe3 + ions doped into TlGaS2 crystal using superposition model analysis of the zero-field splitting parameters

Solid State Communications

Volumn 150, Issue 23-24, 2010, Pages 1077-1081

  Açikgöz, Muhammed ^a   Gnutek, Paweł ^b   Rudowicz, Czesław ^b  

^a BAHCESEHIR UNIVERSITY   (Turkey)

^b WEST POMERANIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A. Semiconductors; C. Point defects; D. Crystal and ligand fields; E. Electron paramagnetic resonance

Indexed keywords

COMPREHENSIVE MODELING; CRYSTAL AND LIGAND FIELDS; CRYSTALLOGRAPHIC DATA; D. CRYSTAL AND LIGAND FIELDS; DOPED CRYSTALS; E. ELECTRON PARAMAGNETIC RESONANCE; ELECTRON PARAMAGNETIC RESONANCE; EPR SPECTRA; EXPERIMENTAL VALUES; HOST CRYSTALS; LOCAL DISTORTION; LOCAL ENVIRONMENTS; LOW SYMMETRY ASPECTS; MODEL PARAMETERS; MODELING RESULTS; ORTHORHOMBIC SYMMETRY; ROOM TEMPERATURE; SITE SYMMETRY; SUPERPOSITION MODEL; TRICLINIC SYMMETRY; ZERO-FIELD SPLITTING PARAMETERS; ZERO-FIELD SPLITTINGS;

DEFECTS; ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; IONS; LIGANDS; PARAMAGNETIC MATERIALS; PARAMAGNETIC RESONANCE; POINT DEFECTS; QUANTUM THEORY; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS;

CRYSTAL SYMMETRY;

EID: 77951103373     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.03.008     Document Type: Article

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