Electrical properties of R 2O-Al 2O 3- SiO 2 glass-ceramics for anodic bonding

Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 9, 2010, Pages 882-888

  Xiong, Dehua ^a   Li, Hong ^a   Cheng, Jinshu ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC BONDING; CRYSTAL PHASE; DIELECTRIC CONSTANTS; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; FREQUENCY DEPENDENCE; HIGH FREQUENCY; LITHIUM METASILICATE; PARENT GLASS; ROOM TEMPERATURE; TEST TEMPERATURES; TESTING FREQUENCIES; VERY HIGH FREQUENCY;

ALUMINUM; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GLASS CERAMICS; LITHIUM; PERMITTIVITY; SILICON COMPOUNDS; SODIUM;

GLASS BONDING;

EID: 77955468568     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-009-0011-4     Document Type: Article

References (10)

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