Surface passivation of 4H-SiC for high current gain bipolar junction transistors

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 837-840

  Negoro, Yuki ^a   Horiuchi, Akihiko ^a   Iwanaga, Kensuke ^a   Yokoyama, Seiichi ^a   Hashimoto, Hideki ^a   Nonaka, Kenichi ^a   Maeyama, Yusuke ^b   Sato, Masashi ^b   Shimizu, Masaaki ^b   Iwakuro, Hiroaki ^b  

^a HONDA R AND D CO LTD   (Japan)

^b Shindengen Electric Manufacturing Co Ltd   (Japan)

Author keywords

Bipolar junction transistor; BJT; Surface passivation

Indexed keywords

PASSIVATION; SILICON CARBIDE;

BLOCKING VOLTAGE; CURRENT GAINS; HIGH CURRENT GAIN; IV CHARACTERISTICS; P-N DIODE; PASSIVATION METHODS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

BIPOLAR TRANSISTORS;

EID: 77955465426     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.837     Document Type: Conference Paper

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