Determination of the optical bandgap of thin amorphous (SiC) 1-x(AlN)x films

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 263-266

  Guerra, J A ^a   Winterstein, A ^b   Erlenbach, O ^a,b   Galvez G ^a   De Zela, F ^a   Weingartner R ^a,b   Winnacker, A ^b  

^a PONTIFICIA UNIVERSIDAD CATÓLICA DEL PERÚ   (Peru)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Absorption coefficient; Amorphous; Bandgap engineering; Magnetron sputtering; Tauc gap

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS MATERIALS; CALCIUM FLUORIDE; ENERGY GAP; FLUORINE COMPOUNDS; FLUORSPAR; III-V SEMICONDUCTORS; MAGNESIA; MAGNETRON SPUTTERING; OPTICAL BAND GAPS; SILICON CARBIDE; SUBSTRATES;

ABSORPTION CO-EFFICIENT; BAND GAP ENGINEERING; DUAL MAGNETRON SPUTTERING; GLASS SUBSTRATES; PSEUDOBINARY COMPOUNDS; RADIO FREQUENCIES; TAUC-GAP; TRANSMISSION MEASUREMENTS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 77955464779     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.263     Document Type: Conference Paper

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