Thinning of SiC wafer by plasma chemical vaporization machining

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 857-860

  Sano, Yasuhisa ^a   Kato, Takehiro ^a   Hori, Tsutomu ^b   Yamamura, Kazuya ^a   Mimura, Hidekazu ^a   Katsuyama, Yoshiaki ^b   Yamauchi, Kazuto ^a  

^a OSAKA UNIVERSITY   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

Atmospheric pressure plasma; PCVM; Plasma chemical vaporization machining; Plasma etching; Residual stress; Thinning; Warp

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; CRACKS; FRACTURE MECHANICS; PLASMA ETCHING; RESIDUAL STRESSES; SILICON CARBIDE; SURFACE ROUGHNESS; VAPORIZATION;

ATMOSPHERIC PRESSURE PLASMAS; PCVM; PLASMA CHEMICAL VAPORIZATION MACHINING; THINNING; WARP;

SILICON WAFERS;

EID: 77955461474     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.857     Document Type: Conference Paper

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