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Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 585-588

Epitaxial graphene elaborated on 3C-SiC(111)/Si epilayers

(6) Ouerghi, A a Portail, M b Kahouli, A a Travers, L a Chassagne, T c Zielinski, M c

a CNRS (France)

b CRHEA CNRS (France)

c SAVOIE TECHNOLAC (France)

Author keywords

3C SiC; Graphene; STM; XPS

Indexed keywords

EPILAYERS; GRAPHENE; GRAPHITE; GRAPHITIZATION; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

3C-SIC; EPITAXIAL GRAPHENE; GRAPHITIZATION PROCESS; MICROSCOPIC SCALE; NEAR FIELD MICROSCOPY; SILICON SUBSTRATES; SURFACE STOICHIOMETRY; THERMAL-ANNEALING;

SILICON CARBIDE;

EID: 77955454563 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.585 Document Type: Conference Paper

Times cited : (4)

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