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Japanese Journal of Applied Physics

Volumn 49, Issue 6 PART 2, 2010, Pages

Patterning of two-dimensional graphene oxide on silicon substrates

(5) Ishikawa, Ryousuke a Bando, Masashi a Morimoto, Yoshitaka a Park, Sang Yoon a Sandhu, Adarsh a

a Tokyo Institute of Technology ^* (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; DEVICE ARCHITECTURES; DEVICE STRUCTURES; GRAPHENE DEVICES; MASS PRODUCTION; NEGATIVELY CHARGED SURFACES; POSITIVELY CHARGED; PRECISE POSITIONING; SILICON SUBSTRATES;

CHEMICAL MODIFICATION; GRAPHENE; GRAPHITE; SURFACE CHEMISTRY; TWO DIMENSIONAL;

SUBSTRATES;

EID: 77955327084 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.06GC02 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.