Electronic band structure matching for half- and full-Heusler alloys

Journal of Magnetism and Magnetic Materials

Volumn 322, Issue 20, 2010, Pages 2989-2993

  Ko, V ^a   Han, G ^a   Feng, Y P ^b  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Band structure; First principle; Giant magnetoresistance; Heusler alloy; Spacer

Indexed keywords

ELECTRONIC BAND STRUCTURE; FIRST PRINCIPLE; FIRST PRINCIPLE CALCULATIONS; FIRST-PRINCIPLES; HALF-HEUSLER; HALF-METALLIC; HEUSLER; HEUSLER ALLOY; HEUSLER ALLOYS; NONMAGNETICS; ROOM TEMPERATURE; SPIN SCATTERING; TWO-MATERIALS;

ALLOYS; BAND STRUCTURE; CERIUM ALLOYS; COBALT; CRYSTAL STRUCTURE; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MANGANESE COMPOUNDS;

GIANT MAGNETORESISTANCE;

EID: 77955309010     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2010.05.017     Document Type: Article

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