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Journal of Crystal Growth

Volumn 312, Issue 14, 2010, Pages 2103-2106

Crystal growth and spectroscopic properties of erbium doped Lu 2SiO5

(3) Ding, Yuchong a,b Zhao, Guangjun a Xu, Xiaodong a

a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

A1. Doping; A2. Czochralski method; B1. Oxides; B3. Solid state lasers

Indexed keywords

A1. DOPING; A2. CZOCHRALSKI METHOD; ABSORPTION AND EMISSION SPECTRA; CZOCHRALSKI METHODS; DISTRIBUTION COEFFICIENT; EMISSION CROSS-SECTION; ERBIUM DOPED; EYE-SAFE; FLUORESCENCE DECAYS; FLUORESCENCE LIFETIMES; GAIN CROSS-SECTION; J-O PARAMETER; JUDD OFELT THEORY; OPTICAL QUALITIES; ROOM TEMPERATURE; SPECTROSCOPIC PARAMETERS; SPECTROSCOPIC PROPERTY;

ABSORPTION; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; ERBIUM; FLUORESCENCE; GRAIN BOUNDARIES; SILICON COMPOUNDS; SINGLE CRYSTALS;

SOLID STATE LASERS;

EID: 77955231824 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.03.029 Document Type: Article

Times cited : (20)

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