Modeling the tensile strength and crack length of wire-sawn silicon wafers

Journal of Solar Energy Engineering, Transactions of the ASME

Volumn 131, Issue 1, 2009, Pages 0110121-0110126

  Funke, Claudia ^a   Wolf, Susann ^a   Stoyan, Dietrich ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Etching; Fracture stress; Fracture theory; Silicon wafer; Strength; Weibull distribution

Indexed keywords

CRACK LENGTH; FRACTURE STRESS; FRACTURE TEST; GRIFFITH CRITERION; INDUCED CRACK; INTENSITY FUNCTIONS; NUMERICAL PARAMETERS; QUANTITATIVE DESCRIPTION; SCALING PARAMETER; TRUNCATION PARAMETER; WAFER SURFACE;

BRITTLE FRACTURE; ETCHING; FRACTURE TESTING; GRIFFITH CRACKS; MECHANICAL PROPERTIES; SAWING; SEMICONDUCTING SILICON COMPOUNDS; STRESS CONCENTRATION; TENSILE STRENGTH; WAVELET TRANSFORMS; WEIBULL DISTRIBUTION; WIRE;

SILICON WAFERS;

EID: 77955202652     PISSN: 01996231     EISSN: 15288986     Source Type: Journal    
DOI: 10.1115/1.3028048     Document Type: Article

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