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Applied Physics Letters

Volumn 95, Issue 12, 2009, Pages

Tuning the remanent polarization of epitaxial ferroelectric thin films with strain

(4) Zhang, J X a Schlom, D G a Chen, L Q a Eom, C B b

a PENNSYLVANIA STATE UNIVERSITY (United States)

b University of Wisconsin Madison (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAINS; EPITAXIAL FERROELECTRIC; EPITAXIAL THIN FILMS; FILM ORIENTATIONS; INDUCED POLARIZATION; LANDAU-DEVONSHIRE THEORY; ORTHORHOMBIC SYMMETRY; REMANENT POLARIZATION; RHOMBOHEDRAL SYMMETRY; STRAIN DEPENDENCE;

CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; EPITAXIAL FILMS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FILMS; POLARIZATION; REMANENCE;

FERROELECTRIC MATERIALS;

EID: 70349684805 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3231444 Document Type: Article

Times cited : (60)

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