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Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

Nanostructures in p-GaAs with improved tunability

(6) Csontos, M a Komijani, Y a Shorubalko, I a,c Ensslin, K a Reuter, D b Wieck, A D b

a ETH ZURICH (Switzerland)

b RUHR UNIVERSITY BOCHUM (Germany)

c SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

C-DOPED; ELECTRICAL CONDUCTANCE; ELECTROSTATIC EFFECT; GAAS; GAAS/ALGAAS HETEROSTRUCTURES; HIGH TUNABILITY; HOLE SYSTEMS; IN-PLANE GATES; NANOFABRICATION TECHNIQUES; P-TYPE; QUANTUM POINT CONTACT; TUNABILITIES; TUNABLE DEVICE;

QUANTUM CHEMISTRY;

POINT CONTACTS;

EID: 77955137647 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3463465 Document Type: Article

Times cited : (11)

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