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Volumn 10, Issue 2, 2010, Pages 762-769
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Effect of nanocomposite gate-dielectric properties on pentacene microstructure and field-effect transistor characteristics
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Author keywords
0 TFT; Dielectric constant; Mobility; Nanocomposite; On off ratio
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Indexed keywords
0-TFT;
BOTTOM CONTACTS;
BOTTOM LAYERS;
DIELECTRIC CONSTANTS;
DOUBLE LAYERS;
ELECTRICAL PROPERTY;
GROWTH MODES;
HIGH CURRENTS;
NANO-TIO;
ON/OFF RATIO;
PENTACENES;
POLYIMIDE MATRIX;
SMOOTHING LAYERS;
SURFACE CHARACTERISTICS;
SURFACE ENERGIES;
ELECTRIC PROPERTIES;
FIELD EFFECT TRANSISTORS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
INTERFACIAL ENERGY;
MICROSTRUCTURE;
MORPHOLOGY;
NANOCOMPOSITES;
PERMITTIVITY;
POLYIMIDES;
SURFACE CHEMISTRY;
SURFACE TENSION;
SURFACE PROPERTIES;
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EID: 77954970346
PISSN: 15334880
EISSN: None
Source Type: Journal
DOI: 10.1166/jnn.2010.1817 Document Type: Conference Paper |
Times cited : (7)
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References (15)
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