Electronic reconstruction at n -type SrTiO3/LaAlO 3interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 8, 2010, Pages

  Verbeeck, J ^a   Bals, S ^a   Kravtsova, A N ^a,d   Lamoen, D ^a   Luysberg, M ^b   Huijben, M ^c   Rijnders, G ^c   Brinkman, A ^c   Hilgenkamp, H ^c   Blank, D H A ^c   Van Tendeloo, G ^a  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF TWENTE   (Netherlands)

^d SOUTHERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954885355     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.085113     Document Type: Article

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30. Beam broadening is often implicitly neglected but makes a significant contribution to the size of the STEM probe. Just noting the nominal beam diameter impinging on the sample leads to a serious under estimation of the actual spatial resolution in STEM EELS.
31. To obtain this figure, several data treatment steps were needed: a background extrapolation, cross correlation to remove energy drift, Gaussian smoothing with a FWHM = 0.5 eV to improve the signal-to-noise ratio. For the single interface sample, the interface signal is taken as the sum of three spectra near the interface over a distance of 0.6 nm. For the multilayer sample, a sum of two spectra taken at the first and second n - type interface and at the first and second p -type interface is taken after checking that the trend in the first and second interface was identical.
32. 3.