Decomposition controlled by surface morphology during Langmuir evaporation of GaAs

Physical Review Letters

Volumn 105, Issue 3, 2010, Pages

  Tersoff, J ^a   Jesson, D E ^b   Tang, W X ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MONASH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DROPLET EPITAXY; DROPLET NUCLEATION; EVAPORATION TEMPERATURE; GAAS; IN-SITU; IN-VACUUM; LANGMUIRS; NEW APPROACHES; NON-PLANAR SURFACES; PROOF OF CONCEPT; QUANTUM STRUCTURE; SURFACE ELECTRON;

COALESCENCE; CRYSTAL GROWTH; DROP FORMATION; EVAPORATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM;

SURFACE MORPHOLOGY;

EID: 77954823443     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.105.035702     Document Type: Article

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