STM and DFT investigations of isolated porphyrin on a silicon-based semiconductor at room temperature

ChemPhysChem

Volumn 10, Issue 18, 2009, Pages 3190-3193

  El Garah, Mohamed ^a   Makoudi, Younes ^a   Palmino, Frank ^a   Duverger, Eric ^a   Sonnet, Philippe ^b   Chaput, Laurent ^b   Gourdon, Andre ^c   Cherioux, Frederic ^a  

^a UNIVERSITÉ DE FRANCHE COMTÉ   (France)

^b UNIVERSITÉ DE HAUTE ALSACE   (France)

^c CEMES CNRS   (France)

Author keywords

Density functional calculations; Physisorption; Porphyrin; Scanning tunneling microscopy; Silicon

Indexed keywords

DENSITY FUNCTIONAL THEORY; PHYSISORPTION; PORPHYRINS; SCANNING TUNNELING MICROSCOPY; SILICON;

ATOMIC RESOLUTION; DFT CALCULATION; ENTIRE SYSTEM; SI (1 1 1); SILICON-BASED;

SEMICONDUCTING SILICON;

EID: 77954783669     PISSN: 14394235     EISSN: 14397641     Source Type: Journal    
DOI: 10.1002/cphc.200900523     Document Type: Article

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