Cosmic ray ruggedness of power semiconductor devices for hybrid vehicles

IEEJ Transactions on Electronics, Information and Systems

Volumn 130, Issue 6, 2010, Pages

  Nishida, Shuichi ^a   Shoji, Tomoyuki ^b   Ohnishi, Toyokazu ^a   Fujikawa, Tourna ^a   Nose, Noboru ^a   Ishiko, Masayasu ^b   Hamada, Kimimori ^a  

^a TOYOTA MOTOR CORPORATION   (Japan)

^b Toyota Central RandD Labs   (Japan)

Author keywords

Comic ray; Device simulation; Insulated gate bipolar transistor (igbt); Neutron irradiation; Parasitic thyristor action; Single event burnout (seb)

Indexed keywords

ACTIVE FILTERS; BIPOLAR TRANSISTORS; COSMIC RAYS; COSMOLOGY; ELECTRIC SWITCHGEAR; ELECTRONIC EQUIPMENT MANUFACTURE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); LAND VEHICLE PROPULSION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; THYRISTORS;

COMIC RAY; DEVICE SIMULATION; DEVICE SIMULATIONS; FAILURE MECHANISM; HIGH VOLTAGE; HYBRID VEHICLES; OPTIMIZED DEVICES; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTORS; QUALITY STANDARD; SINGLE-EVENT BURNOUTS;

NEUTRON IRRADIATION;

EID: 77954443792     PISSN: 03854221     EISSN: 13488155     Source Type: Journal    
DOI: 10.1541/ieejeiss.130.934     Document Type: Article

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