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Volumn 7, Issue 2, 2010, Pages 330-333
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Ab initio study of one-dimensional disorder on III-V semiconductor surfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
AB INITIO CALCULATIONS;
AB INITIO STUDY;
ATOMIC DISORDER;
ATOMIC LAYER;
ELEVATED TEMPERATURE;
ENERGY DIFFERENCES;
GAAS(001);
II-IV SEMICONDUCTORS;
SURFACE ENERGIES;
ATOMS;
DENSITY FUNCTIONAL THEORY;
GALLIUM ARSENIDE;
NANOSCIENCE;
SEMICONDUCTING GALLIUM;
STOICHIOMETRY;
SURFACE CHEMISTRY;
SURFACE TENSION;
GALLIUM ALLOYS;
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EID: 77954341992
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200982498 Document Type: Conference Paper |
Times cited : (5)
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References (14)
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