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Volumn 7, Issue 2, 2010, Pages 330-333

Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AB INITIO STUDY; ATOMIC DISORDER; ATOMIC LAYER; ELEVATED TEMPERATURE; ENERGY DIFFERENCES; GAAS(001); II-IV SEMICONDUCTORS; SURFACE ENERGIES;

EID: 77954341992     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982498     Document Type: Conference Paper
Times cited : (5)

References (14)
  • 12
    • 77954347088 scopus 로고    scopus 로고
    • The ABINIT code is a common project of the Université Catholique de Louvain, Corning Incorporated, and other contributors
    • The ABINIT code is a common project of the Université Catholique de Louvain, Corning Incorporated, and other contributors (www.abinit.org).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.