In-clustering effects in InAlN and InGaN revealed by high pressure studies

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1369-1371

  Gorczyca, I ^a   Suski, T ^a   Kaminska A ^b   Staszczak, G ^a   Schenk, H P D ^c   Christensen, N E ^d   Svane, A ^d  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c CRHEA CNRS   (France)

^d AARHUS UNIVERSITY   (Denmark)

Author keywords

Band structure; Clustering; InAlN; InGaN; Photoluminescence; Pressure effects

Indexed keywords

BAND GAPS; CLUSTERING; CLUSTERING EFFECT; ELECTRONIC BAND STRUCTURE CALCULATION; HIGH HYDROSTATIC PRESSURE; HIGH PRESSURE STUDY; INALN; INDIUM ATOMS; LATTICE RELAXATION; PHOTOLUMINESCENCE MEASUREMENTS; PRESSURE COEFFICIENTS; THEORETICAL RESULT;

BAND STRUCTURE; HYDROSTATIC PRESSURE; INDIUM; PHOTOLUMINESCENCE;

PRESSURE EFFECTS;

EID: 77954286103     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983491     Document Type: Article

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