Electronic structure and physical properties of Ba8Ga16Sn30 clathrates with type-I and type-VIII structure

Physica B: Condensed Matter

Volumn 403, Issue 5-9, 2008, Pages 1140-1141

  Li, Yang ^a,b   Gao, J ^b   Chen, N ^b   Liu, Y ^b   Luo, Z P ^c   Zhang, R H ^b   Ma, X Q ^b   Cao, G H ^b  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^c TEXAS A AND M UNIVERSITY   (United States)

Author keywords

Electronic structure; Sn type I clathrate; Sn type VIII clathrate; Superconductivity

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; SUPERCONDUCTIVITY;

SUPERCONDUCTING TRANSITION; TYPE-I CLATHRATE; TYPE-VIII CLATHRATE;

BARIUM COMPOUNDS;

EID: 39749105351     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.10.140     Document Type: Article

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